Initial growth of GaN and InN over GaAs (110) substrates

Initial Growth of GaN and InN Over GaAs (110) Substrates

We present, a systematic theoretical study of the adsorption of Ga, In and N over GaAs (110) surfaces based on parameter-free, self-consistent total energy and force calculations using the density functional theory. We analyzed the changes in the bond-lengths and in the bond-angles before and after deposition, as well as the total energy behaviour with the adsorbate chemical potential variation...

Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition

A study of GaN buffers grown by metalorganic chemical vapor deposition on ~001! GaAs substrates was performed. Nucleation images obtained by atomic force microscopy ~AFM! were employed to investigate the growth temperature, growth time, and growth rate dependence of the nucleation mechanisms. The growth mode corresponds to two-dimensional ~2D! island nucleation at low temperatures, while three-...

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

The growth of well-aligned nanorods on amorphous substrates can pave the way to fabricate large-scale and low-cost devices. In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. The products formed directly on bare glass are randomly oriented without preferential growth direction. By inserting ...

Ab Initio Calculation of the (100) and (110) Surface Phonon Dispersion of GaAs and GaN

In this work, we have calculated ab initio the phonon dynamics of the Ga-rich GaAs (100) (1 × 1), GaAs (100) (2 × 1), GaN (100) (1 × 1), GaAs (110) and GaN (110) surfaces. Our results for the (100) surfaces show that, while the (2 × 1) reconstruction is characterized by dimer vibrations, the (1 × 1) reconstruction presents interesting features which is closely related to the reduced mass of the...

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates